文献阅读:09

标题:General synthesis of two-dimensional van der Waals heterostructure arrays
作者:Jia Li, Xiangdong Yang, Yang Liu, Bolong Huang, Ruixia Wu, Zhengwei Zhang, Bei Zhao, Huifang Ma, Weiqi Dang, Zheng Wei, Kai Wang, Zhaoyang Lin, Xingxu Yan, Mingzi Sun, Bo Li, Xiaoqing Pan, Jun Luo, Guangyu Zhang, Yuan Liu, Yu Huang, Xidong Duan and Xiangfeng Duan
期刊:Nature
日期:2020

简介:这是一篇关于范德华异质结的文献,标题为“二维范德华异质结阵列的一般合成方法”。大致翻译了一下,翻译仅供参考,请以原文为准。如翻译有不妥之处,欢迎一起讨论。

摘要

Two-dimensional van der Waals heterostructures (vdWHs) have attracted considerable interest.[1–4] However, most vdWHs reported so far are created by an arduous micromechanical exfoliation and manual restacking process[5], which—although versatile for proof-of-concept demonstrations[6–16] and fundamental studies[17–30]—is clearly not scalable for practical technologies. Here we report a general synthetic strategy for two-dimensional vdWH arrays between metallic transitionmetal dichalcogenides (m-TMDs) and semiconducting TMDs (s-TMDs). By selectively patterning nucleation sites on monolayer or bilayer s-TMDs, we precisely control the nucleation and growth of diverse m-TMDs with designable periodic arrangements and tunable lateral dimensions at the predesignated spatial locations, producing a series of vdWH arrays, including VSe2/WSe2, NiTe2/WSe2, CoTe2/WSe2, NbTe2/WSe2, VS2/WSe2, VSe2/MoS2 and VSe2/WS2. Systematic scanning transmission electron microscopy studies reveal nearly ideal vdW interfaces with widely tunable moire superlattices. With the atomically clean vdW interface, we further show that the m-TMDs function as highly reliable synthetic vdW contacts for the underlying WSe2 with excellent device performance and yield, delivering a high ON-current density of up to 900 microamperes per micrometre in bilayer WSe2 transistors. This general synthesis of diverse two-dimensional vdWH arrays provides a versatile material platform for exploring exotic physics and promises a scalable pathway to highperformance devices.

二维范德华异质结(van der Waals heterostructure,vdWH)引起了人们极大的兴趣[1–4]。然而,迄今为止报道的大多数 vdWH 都是由艰难的微机械剥离和手动重组制备而成的,尽管它在概念证明演示[6–16]和基础研究[17–30]中是通用的方法,但在实际工艺方面显然是不可扩展的。作者在此报道了一种通用的合成策略,可以用来合成由金属性过渡金属二硫化物(metallic transitionmetal dichalcogenide,m-TMD)和半导体性 TMD(semiconducting TMD,s-TMD)组成的二维 vdWH 阵列。通过在单层或者双层 s-TMD 上选择性地图案化排列形核位点,作者精确地控制了不同 m-TMD 的形核和生长过程,使其在预定的空间位置有可设计的周期性排列以及可调节的横向尺寸,由此产生了一系列 vdWH 阵列,包括 VSe2/WSe2、NiTe2/WSe2、CoTe2/WSe2、NbTe2/WSe2、VS2/WSe2、VSe2/MoS2 以及 VSe2/WS2。系统的扫描透射电镜研究揭示了具有广泛可调超晶格的近乎理想的 vdW 界面。利用原子清洁的 vdW 接口,作者进一步证明了 m-TMD 作为底层 WSe2 的高可靠性合成 vdW 触点具有优异的器件性能和成品率,在双层 WSe2 晶体管中提供高达 900 微安每微米的高电流密度。这种对各种二维 vdWH 阵列的一般合成方法,为探索奇异物理提供了一个多用途的材料平台,并为高性能器件提供了一条可扩展的途径。

文章作者: 喵函数
文章链接: https://eigenmiao.site/2020/03/21/article-09/
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