文献阅读:11

标题:Coplanar semiconductor–metal circuitry defined on few-layer MoTe2 via polymorphic heteroepitaxy
作者:Ji Ho Sung, Hoseok Heo, Saerom Si, Yong Hyeon Kim, Hyeong Rae Noh, Kyung Song, Juho Kim, Chang-Soo Lee, Seung-Young Seo, Dong-Hwi Kim, Hyoung Kug Kim, Han Woong Yeom, Tae-Hwan Kim, Si-Young Choi, Jun Sung Kim and Moon-Ho Jo
期刊:Nature Nanotechnology
日期:2017

简介:这是一篇关于平面异质结的文献,标题为“通过多晶异质外延生长方法限定在少数层 MoTe2 上的共面半导体-金属电路”。

摘要

Crystal polymorphism selectively stabilizes the electronic phase of atomically thin transition-metal dichalcogenides (TMDCs) as metallic or semiconducting, suggesting the potential to integrate these polymorphs as circuit components in two-dimensional electronic circuitry. Developing a selective and sequential growth strategy for such two-dimensional polymorphs in the vapour phase is a critical step in this endeavour. Here, we report on the polymorphic integration of distinct metallic (1T′) and semiconducting (2H) MoTe2 crystals within the same atomic planes by heteroepitaxy. The realized polymorphic coplanar contact is atomically coherent, and its barrier potential is spatially tight-confined over a length of only a few nanometres, with a lowest contact barrier height of $\sim 25\ \rm{meV}$. We also demonstrate the generality of our synthetic integration approach for other TMDC polymorph films with large areas.

文章作者: 喵函数
文章链接: https://eigenmiao.site/2020/05/11/article-11/
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