标题：Coplanar semiconductor–metal circuitry defined on few-layer MoTe₂ via polymorphic heteroepitaxy
作者：Ji Ho Sung, Hoseok Heo, Saerom Si, Yong Hyeon Kim, Hyeong Rae Noh, Kyung Song, Juho Kim, Chang-Soo Lee, Seung-Young Seo, Dong-Hwi Kim, Hyoung Kug Kim, Han Woong Yeom, Tae-Hwan Kim, Si-Young Choi, Jun Sung Kim and Moon-Ho Jo
期刊：Nature Nanotechnology
日期：2017

简介：这是一篇关于平面异质结的文献，标题为“通过多晶异质外延生长方法限定在少数层 MoTe₂ 上的共面半导体-金属电路”。

摘要

Crystal polymorphism selectively stabilizes the electronic phase of atomically thin transition-metal dichalcogenides (TMDCs) as metallic or semiconducting, suggesting the potential to integrate these polymorphs as circuit components in two-dimensional electronic circuitry. Developing a selective and sequential growth strategy for such two-dimensional polymorphs in the vapour phase is a critical step in this endeavour. Here, we report on the polymorphic integration of distinct metallic (1T′) and semiconducting (2H) MoTe₂ crystals within the same atomic planes by heteroepitaxy. The realized polymorphic coplanar contact is atomically coherent, and its barrier potential is spatially tight-confined over a length of only a few nanometres, with a lowest contact barrier height of $\sim 25\ \rm{meV}$. We also demonstrate the generality of our synthetic integration approach for other TMDC polymorph films with large areas.